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NTF3055L175T3

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NTF3055L175T3

MOSFET N-CH 60V 2A SOT223

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTF3055L175T3 is an N-Channel MOSFET designed for efficient switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 2A at 25°C. The low on-resistance of 175mOhm is achieved at 1A drain current and 5V gate-source voltage. With a maximum power dissipation of 1.3W (Ta) and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for demanding environments. The gate charge (Qg) is 10nC at 5V, and input capacitance (Ciss) is 270pF at 25V. Packaged in a SOT-223 (TO-261) surface-mount case, the NTF3055L175T3 is supplied on tape and reel. This component is commonly utilized in power management, automotive, and industrial control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Rds On (Max) @ Id, Vgs175mOhm @ 1A, 5V
FET Feature-
Power Dissipation (Max)1.3W (Ta)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageSOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds270 pF @ 25 V

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