NTF3055L175T1G
MOSFET N-CH 60V 2A SOT223Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTF3055L175T1G is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 2A at 25°C, with a maximum power dissipation of 1.3W. The on-resistance (Rds On) is specified at 175mOhm at 1A and 5V drive voltage. Fabricated using MOSFET technology, it offers a low gate charge of 10 nC at 5V and input capacitance (Ciss) of 270 pF at 25V. The device is suitable for operation across an extended temperature range of -55°C to 175°C. Packaged in a SOT-223 (TO-261) surface mount configuration, the NTF3055L175T1G is commonly utilized in industrial automation, computing, and automotive systems where robust power management is critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 1A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | SOT-223 (TO-261) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 25 V |
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