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NTF3055L108T3LF

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NTF3055L108T3LF

MOSFET N-CH 60V 3A SOT223

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTF3055L108T3LF is an N-Channel MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 3A at 25°C. With a maximum On-Resistance (Rds On) of 120mOhm at 1.5A and 5V gate drive, it offers low conduction losses. The NTF3055L108T3LF is housed in a SOT-223 (TO-261) surface mount package, providing a power dissipation capability of 1.3W. Key electrical characteristics include a gate charge (Qg) of 15nC (max) at 5V and input capacitance (Ciss) of 440pF (max) at 25V. Operating across a wide temperature range of -55°C to 175°C, this MOSFET is suitable for use in various industrial and automotive systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Rds On (Max) @ Id, Vgs120mOhm @ 1.5A, 5V
FET Feature-
Power Dissipation (Max)1.3W (Ta)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageSOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds440 pF @ 25 V

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