NTF3055L108T3G
MOSFET N-CH 60V 3A SOT223Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NTF3055L108T3G is an N-Channel MOSFET designed for efficient power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 3A at 25°C. The Rds On is specified at a maximum of 120mOhm at 1.5A and 5V gate drive. With a gate charge (Qg) of 15nC (max) at 5V and input capacitance (Ciss) of 440pF (max) at 25V, it offers good switching characteristics. The component is housed in a SOT-223 (TO-261) package, suitable for surface mounting. This MOSFET is rated for a maximum power dissipation of 1.3W (Ta) and operates across an extended temperature range of -55°C to 175°C. It finds application in various industries including automotive, industrial, and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 1.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | SOT-223 (TO-261) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
2SK4088LS-1E
MOSFET N-CH 650V 7.5A TO220F-3FS
NTMFS4C028NT3G
MOSFET N-CH 30V 16.4A/52A 5DFN
