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NTF3055-160T1

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NTF3055-160T1

MOSFET N-CH 60V 2A SOT223

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTF3055-160T1 is an N-Channel MOSFET designed for robust performance in demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 2A at 25°C. With a low on-resistance of 160mOhm at 1A and 10V gate-source voltage, it ensures efficient power delivery. The device boasts a maximum power dissipation of 1.3W (Ta) and operates across an extended temperature range of -55°C to 175°C. Packaged in a SOT-223 (TO-261) surface-mount configuration, this MOSFET is suitable for use in automotive, industrial control, and power management systems. Key electrical parameters include a gate charge of 14 nC and input capacitance of 280 pF, both measured at standard voltage conditions. The maximum gate-source voltage rating is ±20V.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Rds On (Max) @ Id, Vgs160mOhm @ 1A, 10V
FET Feature-
Power Dissipation (Max)1.3W (Ta)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageSOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds280 pF @ 25 V

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