NTF3055-100T3LF
MOSFET N-CH 60V 3A SOT223Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTF3055-100T3LF is an N-Channel MOSFET designed for efficient power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 60 V and a Continuous Drain Current (Id) of 3 A at 25°C. Its low on-resistance, specified at 110 mOhm maximum at 1.5 A and 10 V Vgs, is critical for minimizing conduction losses. The component is housed in a SOT-223 (TO-261) surface-mount package, facilitating compact board designs. With a maximum power dissipation of 1.3 W (Ta) and an operating temperature range of -55°C to 175°C (TJ), it offers robust performance in demanding environments. Key electrical parameters include a Gate Charge (Qg) of 22 nC maximum at 10 V Vgs and an Input Capacitance (Ciss) of 455 pF maximum at 25 V Vds. This MOSFET is suitable for use in industrial automation, consumer electronics, and automotive systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 (TO-261) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 455 pF @ 25 V |
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