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NTF3055-100T1G-IRH1

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NTF3055-100T1G-IRH1

MOSFET N-CH 60V 3A SOT223

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTF3055-100T1G-IRH1 is an N-Channel MOSFET designed for demanding applications. This component features a 60V drain-source voltage rating and a continuous drain current capability of 3A at 25°C, with a maximum power dissipation of 1.3W. It offers a low on-resistance of 110mOhm at 1.5A and 10V Vgs, further specified with a gate charge of 22 nC at 10V. The NTF3055-100T1G-IRH1 utilizes advanced MOSFET technology and is housed in a compact SOT-223 (TO-261) surface-mount package, supplied on tape and reel. Its operating temperature range is -55°C to 175°C (TJ). This device is AEC-Q101 qualified and automotive grade, making it suitable for automotive and industrial control systems. The ±20V maximum gate-source voltage and 4V gate threshold voltage further define its operational parameters.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Rds On (Max) @ Id, Vgs110mOhm @ 1.5A, 10V
FET Feature-
Power Dissipation (Max)1.3W (Ta)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageSOT-223 (TO-261)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds455 pF @ 25 V
QualificationAEC-Q101

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