NTF3055-100T1
MOSFET N-CH 60V 3A SOT223Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTF3055-100T1 is an N-Channel MOSFET designed for efficient power switching applications. This component features a drain-to-source voltage (Vdss) of 60V and can handle a continuous drain current (Id) of 3A at 25°C, with a maximum power dissipation of 1.3W (Ta). The device exhibits a low on-resistance (Rds On) of 110mOhm at 1.5A and 10V gate drive. Key electrical characteristics include a gate charge (Qg) of 22 nC and input capacitance (Ciss) of 455 pF at specified voltage conditions. The NTF3055-100T1 is packaged in a SOT-223 (TO-261) surface mount configuration, suitable for operation across a wide temperature range from -55°C to 175°C. This MOSFET finds application in industrial and consumer electronics sectors requiring robust power management solutions.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223 (TO-261) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 455 pF @ 25 V |
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