NTF2955PT1G
MOSFET P-CH 60V 1.7A SOT-223Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTF2955PT1G is a P-Channel MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) @ 25°C of 1.7A (Ta) with a maximum power dissipation of 1W (Ta). The Rds On is specified at a maximum of 185mOhm @ 2.4A, 10V. Key electrical parameters include a Gate Charge (Qg) of 14.3 nC @ 10 V and an Input Capacitance (Ciss) of 492 pF @ 25 V. The device operates across a wide temperature range of -55°C to 175°C (TJ). Packaged in a SOT-223 (TO-261) form factor, this component is supplied on a Tape & Reel. Its specifications make it suitable for applications in power management and general-purpose switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 185mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | SOT-223 (TO-261) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 492 pF @ 25 V |
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