NTDV5805NT4G
MOSFET N-CH 40V 51A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTDV5805NT4G is an N-Channel MOSFET designed for demanding applications requiring high current handling and low on-resistance. This device features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) rating of 51A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 9.5mOhm when driving 15A with a gate-source voltage (Vgs) of 10V. The gate charge (Qg) is rated at 80 nC maximum at 10V Vgs, and input capacitance (Ciss) is 1725 pF maximum at 25V Vds. The NTDV5805NT4G utilizes advanced MOSFET technology and is supplied in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, suitable for automated assembly processes. This component finds extensive use in power management, automotive systems, and industrial motor control applications. The maximum Vgs is ±20V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1725 pF @ 25 V |