NTDV5804NT4G
MOSFET N-CH 40V 69A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTDV5804NT4G is an N-Channel Power MOSFET designed for demanding applications. This component features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 69A at 25°C (Tc), with a maximum power dissipation of 71W (Tc). Its low on-resistance (Rds On) of 8.5mOhm is achieved at 30A and 10V gate-source voltage. The device offers a gate charge (Qg) of 45nC maximum at 10V and an input capacitance (Ciss) of 2850pF maximum at 25V. Utilizing MOSFET technology, it is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount configuration, provided on tape and reel. The NTDV5804NT4G is suitable for applications in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 69A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2850 pF @ 25 V |
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