NTDV3055L104T4G
MOSFET N-CH 60V 12A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTDV3055L104T4G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This AEC-Q101 qualified component offers a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 12 A at 25°C. Featuring a low on-resistance (Rds On) of 104 mOhm maximum at 6 A and 5 V gate drive, it minimizes conduction losses. The device boasts a gate charge (Qg) of 20 nC maximum at 5 V and an input capacitance (Ciss) of 440 pF maximum at 25 V. With a maximum power dissipation of 1.5 W and an operating temperature range of -55°C to 175°C, it is suitable for demanding automotive environments. The NTDV3055L104T4G is supplied in a DPAK (TO-252-3, DPAK (2 Leads + Tab), SC-63) surface-mount package, available on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 104mOhm @ 6A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V |
| Qualification | AEC-Q101 |
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