Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

NTDV20P06LT4G-VF01

Banner
productimage

NTDV20P06LT4G-VF01

PFET DPAK 60V 15.5A 130R

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTDV20P06LT4G-VF01 is a P-Channel Power MOSFET in a TO-252-3, DPAK package. This device features a 60V Drain-to-Source Voltage (Vdss) and a continuous drain current of 15.5A (Tc) at 25°C. The Rds(on) is specified at a maximum of 150mOhm at 7.5A and 5V gate drive. With a maximum power dissipation of 65W (Tc), it is suitable for demanding applications. The NTDV20P06LT4G-VF01 is AEC-Q101 qualified, indicating its suitability for the automotive industry. Typical applications include power switching and motor control within automotive and industrial systems. The device is supplied on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C15.5A (Tc)
Rds On (Max) @ Id, Vgs150mOhm @ 7.5A, 5V
FET Feature-
Power Dissipation (Max)65W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1190 pF @ 25 V
QualificationAEC-Q101

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
FCP850N80Z

MOSFET N-CH 800V 8A TO220-3

product image
MCH3476-TL-H

MOSFET N-CH 20V 2A SC70FL/MCPH3

product image
RFD14N05LSM

MOSFET N-CH 50V 14A TO252AA