NTDV20P06LT4G
MOSFET P-CH 60V 15.5A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTDV20P06LT4G is a P-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 15.5 A at 25°C. With a maximum On-Resistance (Rds On) of 150 mOhm at 7.5 A and 5 V gate drive, it offers efficient power handling. The NTDV20P06LT4G boasts a maximum power dissipation of 65 W at the case temperature. Key parameters include a gate charge (Qg) of 26 nC at 5 V and input capacitance (Ciss) of 1190 pF at 25 V. This MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, suitable for high-density board designs. Operating across a temperature range of -55°C to 175°C (TJ), it finds application in industrial power supplies, automotive systems, and power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 7.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 25 V |
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