NTDV20N06T4G-VF01
MOSFET N-CH 60V 20A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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This onsemi N-Channel Power MOSFET, part number NTDV20N06T4G-VF01, is designed for demanding applications. It features a 60V Drain-Source Voltage (Vdss) and a continuous drain current of 20A (Ta) at 25°C. The device exhibits a maximum on-resistance of 46mOhm at 10A and 10V Vgs, with a gate charge (Qg) of 30 nC maximum at 10V. Input capacitance (Ciss) is rated at 1015 pF maximum. The MOSFET is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package and operates within a temperature range of -55°C to 175°C. This component is suitable for use in power supply circuits, motor control, and general power switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.88W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1015 pF @ 25 V |
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