NTDV20N06T4G
MOSFET N-CH 60V 20A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTDV20N06T4G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous drain current (Id) of 20 A at 25°C (Ta). With a maximum on-resistance (Rds On) of 46 mOhm at 10 A and 10 V, and a gate charge (Qg) of 30 nC at 10 V, it offers efficient switching performance. The device supports a gate drive voltage of 10 V and has a maximum gate-source voltage (Vgs) of ±20 V. Its threshold voltage (Vgs(th)) is 4 V at 250 µA. Offered in a DPAK (TO-252-3, DPAK) surface mount package, the NTDV20N06T4G has a maximum power dissipation of 1.88 W (Ta) and 60 W (Tj). It operates across a wide temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in power management, automotive electronics, and industrial control systems. The component is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.88W (Ta), 60W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1015 pF @ 25 V |
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