NTDV20N06LT4G
MOSFET N-CH 60V 20A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTDV20N06LT4G is a 60 V N-Channel Power MOSFET designed for efficient power switching applications. This device features a low on-resistance of 48 mOhm maximum at 10 A and 5 V Vgs, minimizing conduction losses. Its continuous drain current capability is 20 A at 25°C ambient temperature, with a pulsed drain current capability to handle transient loads. The NTDV20N06LT4G offers a maximum gate charge of 32 nC at 5 V, facilitating fast switching speeds. With a junction-to-ambient power dissipation of 1.36 W and a junction-to-case power dissipation of 60 W, it is suitable for demanding thermal environments. Key parameters include a Vgs(th) of 2 V at 250 µA and a maximum Vgs of ±15 V. The component is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel. This MOSFET is commonly utilized in automotive, industrial power control, and consumer electronics sectors where robust and efficient power management is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 10A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.36W (Ta), 60W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 990 pF @ 25 V |