NTDV18N06LT4G
MOSFET N-CH 60V 18A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTDV18N06LT4G is an N-Channel Power MOSFET designed for efficient switching applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) capability of 18A at 25°C. With a maximum on-resistance (Rds On) of 65mOhm at 9A and 5V gate drive, it offers low conduction losses. The device has a gate charge (Qg) of 22 nC at 5V and an input capacitance (Ciss) of 675 pF at 25V. It supports a gate-source voltage (Vgs) range of ±15V and a threshold voltage (Vgs(th)) of 2V at 250µA. The NTDV18N06LT4G is housed in a DPAK (TO-252-3) surface-mount package, facilitating integration into compact board designs. It operates across an extended temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive power management, industrial motor control, and power supply applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 9A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 55W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 675 pF @ 25 V |
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