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NTDS015N15MCT4G

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NTDS015N15MCT4G

MOSFET N-CH 150V 11A/50A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTDS015N15MCT4G is a PowerTrench® series N-Channel MOSFET in a DPAK package. This device features a drain-to-source voltage (Vdss) of 150V and offers continuous drain current (Id) ratings of 11A at ambient temperature (Ta) and 50A at case temperature (Tc). The maximum on-resistance (Rds On) is specified at 15mOhm with a gate-to-source voltage (Vgs) of 10V and a drain current (Id) of 29A. Key parameters include a maximum gate charge (Qg) of 27 nC at 10V Vgs and input capacitance (Ciss) of 2120 pF at 75V Vds. Power dissipation is rated at 3.8W (Ta) and 83W (Tc). The operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in power supply, automotive, and industrial applications.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs15mOhm @ 29A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id4.5V @ 162µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2120 pF @ 75 V

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