NTD95N02RT4G
MOSFET N-CH 24V 12A/32A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD95N02RT4G is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a 24 V Drain-Source Voltage (Vdss) and offers a continuous drain current of 12 A at ambient temperature (Ta) and 32 A at case temperature (Tc). With a low Rds(on) of 5 mOhm at 20 A and 10 V Vgs, it minimizes conduction losses. The device supports gate drive voltages from 4.5 V to 10 V and has a maximum gate charge of 21 nC at 4.5 V. Its typical application areas include automotive power management and general-purpose power supplies. The NTD95N02RT4G is housed in a DPAK (TO-252-3) surface-mount package, facilitating automated assembly. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 86W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 20 V |