NTD95N02RT4
MOSFET N-CH 24V 12A/32A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTD95N02RT4 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 24V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) rating of 12A at ambient temperature and 32A at case temperature. With a low on-resistance (Rds On) of 5mOhm at 20A and 10Vgs, it minimizes conduction losses. The device supports gate drive voltages from 4.5V to 10V and has a typical gate charge (Qg) of 21 nC at 4.5V. It is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 for surface mounting and offers a maximum power dissipation of 1.25W (Ta) and 86W (Tc). The NTD95N02RT4 is suitable for use in automotive, industrial, and power supply applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 86W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 20 V |
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