NTD95N02RG
MOSFET N-CH 24V 12A/32A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD95N02RG is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 24 V and a continuous drain current (Id) of 12 A at 25°C ambient, scaling to 32 A under typical thermal conditions. With a low on-resistance (Rds On) of 5 mOhm at 20 A and 10 Vgs, it offers efficient power handling. The device supports gate drive voltages from 4.5 V to 10 V, with a maximum gate charge (Qg) of 21 nC at 4.5 V. Input capacitance (Ciss) is specified at a maximum of 2400 pF at 20 V. The NTD95N02RG is housed in a TO-252-3, DPAK surface-mount package, facilitating integration into compact designs. Its power dissipation capabilities are 1.25 W (Ta) and 86 W (Tc). Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for automotive, industrial, and consumer electronics sectors requiring robust power switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 86W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 20 V |
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