NTD95N02R-1G
MOSFET N-CH 24V 12A/32A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD95N02R-1G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 24V and offers a continuous drain current (Id) of 12A at ambient temperature (Ta) and 32A at case temperature (Tc). The device achieves a low on-resistance (Rds On) of 5mOhm at 20A and 10V gate drive. Key characteristics include a maximum gate charge (Qg) of 21 nC at 4.5V and input capacitance (Ciss) of 2400 pF at 20V. With a maximum power dissipation of 1.25W (Ta) and 86W (Tc), and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for automotive and industrial power switching applications. It is supplied in a TO-251-3 Short Leads, IPAK package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 86W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 20 V |
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