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NTD95N02R

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NTD95N02R

MOSFET N-CH 24V 12A/32A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTD95N02R is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 24 V and a continuous drain current capability of 12 A at ambient temperature (Ta) and 32 A at case temperature (Tc). The low on-resistance of 5 mOhm at 20 A and 10 V gate drive makes it suitable for efficient power switching. With a maximum gate charge (Qg) of 21 nC at 4.5 V and an input capacitance (Ciss) of 2400 pF at 20 V, it offers robust switching characteristics. The device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, enabling high power dissipation of 1.25 W (Ta) and 86 W (Tc). Its operating temperature range is -55°C to 150°C. This MOSFET is commonly utilized in automotive, industrial, and power supply sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)1.25W (Ta), 86W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)24 V
Gate Charge (Qg) (Max) @ Vgs21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2400 pF @ 20 V

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