NTD85N02RT4G
MOSFET N-CH 24V 12A/85A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTD85N02RT4G is an N-Channel Power MOSFET designed for demanding applications. This MOSFET features a Drain-to-Source Voltage (Vdss) of 24V and offers a continuous drain current (Id) of 12A at ambient temperature (Ta) and 85A at case temperature (Tc). The device exhibits a low on-resistance (Rds On) of 5.2mOhm at 20A and 10V gate-to-source voltage (Vgs). Key electrical characteristics include a gate charge (Qg) of 17.7 nC maximum at 5V Vgs and input capacitance (Ciss) of 2050 pF maximum at 20V Vds. With a maximum power dissipation of 1.25W at Ta and 78.1W at Tc, the NTD85N02RT4G is suitable for power management, automotive, and industrial power switching applications. The component is housed in a TO-252-3, DPAK surface mount package and operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 78.1W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.7 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 20 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
