NTD85N02RT4
MOSFET N-CH 24V 12A/85A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD85N02RT4 is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 24 V. This component offers a continuous drain current of 12 A at ambient temperature (Ta) and 85 A at case temperature (Tc). The maximum power dissipation is 1.25 W (Ta) and 78.1 W (Tc). Featuring a low on-resistance of 5.2 mOhm at 20 A and 10 V, the NTD85N02RT4 utilizes MOSFET technology and is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package. Key electrical parameters include a maximum gate charge (Qg) of 17.7 nC at 5 V and a maximum input capacitance (Ciss) of 2050 pF at 20 V. It operates within a temperature range of -55°C to 150°C. This component is typically employed in automotive and industrial applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 78.1W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.7 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 20 V |
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