NTD85N02R-1G
MOSFET N-CH 24V 12A/85A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD85N02R-1G is an N-Channel Power MOSFET. This component features a Drain-to-Source Voltage (Vdss) of 24 V and a continuous drain current (Id) capability of 12 A at 25°C ambient and 85 A at 25°C case temperature. The Rds On is specified at a maximum of 5.2 mOhm at 20 A and 10 V gate drive. It offers a maximum gate charge (Qg) of 17.7 nC at 5 V and an input capacitance (Ciss) of 2050 pF at 20 V. The device supports gate drive voltages from 4.5 V to 10 V, with a maximum Vgs of ±20 V and a threshold voltage (Vgs(th)) of 2 V at 250 µA. Maximum power dissipation is 1.25 W (Ta) or 78.1 W (Tc). The NTD85N02R-1G is housed in an IPAK (TO-251-3 Short Leads) package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in industrial and automotive applications requiring efficient power switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 78.1W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.7 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 20 V |
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