NTD85N02R-001
MOSFET N-CH 24V 12A/85A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD85N02R-001 is an N-Channel Power MOSFET designed for demanding applications. This component offers a Drain-Source Voltage (Vdss) of 24V, with a continuous drain current capability of 12A at 25°C ambient and 85A at 25°C case temperature. Featuring a maximum Rds(on) of 5.2mOhm at 20A and 10V gate drive, it ensures efficient power transfer. The device is packaged in an IPAK (TO-251-3 Short Leads) for through-hole mounting and supports a wide operating temperature range from -55°C to 150°C. Key electrical parameters include a gate charge of 17.7 nC (max) at 5V and input capacitance of 2050 pF (max) at 20V. Maximum power dissipation is rated at 1.25W ambient and 78.1W case. This MOSFET finds application in power management solutions and automotive systems.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 78.1W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.7 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 20 V |
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