NTD80N02T4G
MOSFET N-CH 24V 80A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD80N02T4G is an N-Channel Power MOSFET designed for high-current applications. This component features a 24V drain-source breakdown voltage (Vds) and offers a continuous drain current (Id) of 80A at 25°C. The low on-resistance (Rds On) of 5.8mOhm is achieved at 80A and a gate-source voltage (Vgs) of 10V, with a maximum power dissipation of 75W (Tc). The device has a gate charge (Qg) of 42 nC at 4.5V and input capacitance (Ciss) of 2600 pF at 20V. It supports gate drive voltages from 4.5V to 10V, with a maximum Vgs of ±20V and threshold voltage (Vgs(th)) of 3V at 250µA. Packaged in a TO-252-3, DPAK (SC-63) surface-mount configuration, it is supplied on tape and reel. This MOSFET is suitable for use in automotive and industrial power switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 20 V |
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