NTD80N02T4
MOSFET N-CH 24V 80A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTD80N02T4 is an N-Channel Power MOSFET designed for high-current applications. Featuring a Drain-Source Voltage (Vdss) of 24 V and a continuous drain current (Id) of 80 A at 25°C, this device exhibits a low on-resistance (Rds On) of 5.8 mOhm at 80 A and 10 V. Its surface mount DPAK package (TO-252-3, DPAK) facilitates efficient thermal management, supporting a power dissipation of 75 W at 25°C. The gate charge (Qg) is specified at 42 nC maximum at 4.5 V, with a drive voltage range of 4.5 V to 10 V. Input capacitance (Ciss) is 2600 pF maximum at 20 V. This component is suitable for use in automotive and industrial power switching applications. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 20 V |
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