NTD80N02G
MOSFET N-CH 24V 80A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD80N02G is an N-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 24V and a continuous Drain current (Id) of 80A at 25°C. With a maximum power dissipation of 75W (Tc), it is suitable for high-current switching scenarios. The gate charge (Qg) is 42 nC at 4.5V, and the input capacitance (Ciss) is a maximum of 2600 pF at 20V. The on-resistance (Rds On) is a low 5.8mOhm at 80A and 10V. The NTD80N02G utilizes Metal Oxide technology and is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 configuration for surface mounting. Operating temperature ranges from -55°C to 150°C (TJ). This device is commonly found in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 20 V |
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