NTD80N02-1G
MOSFET N-CH 24V 80A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD80N02-1G is an N-Channel Power MOSFET designed for high-current switching applications. This component features a drain-source voltage (Vdss) of 24V and a continuous drain current (Id) rating of 80A at 25°C. The on-resistance (Rds On) is specified as a maximum of 5.8mOhm at 80A and 10V gate-source voltage. With a gate charge (Qg) of 42nC maximum at 4.5V and an input capacitance (Ciss) of 2600pF maximum at 20V, it is suitable for demanding power management tasks. The device offers a maximum power dissipation of 75W (Tc) and operates within a temperature range of -55°C to 150°C. Packaged in an IPAK (TO-251-3 Short Leads) with through-hole mounting, the NTD80N02-1G is commonly utilized in automotive and industrial power systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 20 V |
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