NTD80N02-001
MOSFET N-CH 24V 80A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD80N02-001 is an N-Channel Power MOSFET designed for high-current switching applications. This component features a drain-source voltage (Vdss) of 24 V and a continuous drain current (Id) of 80 A at 25°C, with a maximum power dissipation of 75 W (Tc). The low on-resistance (Rds On) of 5.8 mOhm at 80 A and 10 V gate-source voltage ensures efficient power transfer. Key parameters include a gate charge (Qg) of 42 nC at 4.5 V and input capacitance (Ciss) of 2600 pF at 20 V. The NTD80N02-001 operates within a temperature range of -55°C to 150°C and is housed in an IPAK (TO-251-3 Short Leads, TO-251AA) through-hole package. This device is suitable for applications in power management and automotive sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 20 V |