NTD80N02
MOSFET N-CH 24V 80A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD80N02 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 24 V and offers a continuous Drain Current (Id) of 80 A at 25°C (Tc). With a low on-resistance (Rds On) of 5.8 mOhm at 80 A and 10 V, it minimizes conduction losses. The device boasts a maximum power dissipation of 75 W (Tc) and a gate charge (Qg) of 42 nC at 4.5 V, facilitating efficient switching. Input capacitance (Ciss) is rated at 2600 pF at 20 V. The NTD80N02 utilizes surface mount technology in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, suitable for high-power density designs. It is engineered for operation across a wide temperature range of -55°C to 150°C (TJ). This MOSFET is commonly found in automotive, industrial power control, and power supply designs.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 20 V |
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