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NTD78N03T4G

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NTD78N03T4G

MOSFET N-CH 25V 11.4A/78A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTD78N03T4G is an N-Channel MOSFET designed for power switching applications. This device features a 25V drain-to-source voltage (Vdss) and a continuous drain current rating of 11.4A at 25°C ambient and 78A at 25°C case temperature. The NTD78N03T4G offers a low on-resistance of 6mOhm maximum at 78A and 10V gate-source voltage, with a Vgs(th) of 3V at 250µA. Key parameters include a gate charge (Qg) of 35 nC maximum at 4.5V and input capacitance (Ciss) of 2250 pF maximum at 12V. It supports drive voltages from 4.5V to 10V and has a maximum gate-source voltage of ±20V. The component is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, with a maximum power dissipation of 1.4W (Ta) and 64W (Tc). Operating temperature ranges from -55°C to 175°C. This MOSFET is commonly utilized in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11.4A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs6mOhm @ 78A, 10V
FET Feature-
Power Dissipation (Max)1.4W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2250 pF @ 12 V

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