NTD78N03-1G
MOSFET N-CH 25V 11.4A/78A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD78N03-1G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 25 V and offers a continuous drain current capability of 11.4 A at 25°C ambient and 78 A at 25°C case temperature. With a low on-resistance (Rds On) of 6 mOhm at 78 A and 10 V, it minimizes conduction losses. The device supports gate drive voltages from 4.5 V to 10 V, with a maximum gate charge (Qg) of 35 nC at 4.5 V and input capacitance (Ciss) of 2250 pF at 12 V. Power dissipation is rated at 1.4 W (Ta) and 64 W (Tc). The NTD78N03-1G utilizes MOSFET technology and is housed in a TO-251-3 Short Leads, IPAK package, suitable for through-hole mounting. It operates across an extended temperature range of -55°C to 175°C. This component finds application in power management systems across automotive and industrial sectors.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.4A (Ta), 78A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 78A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta), 64W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 12 V |
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