NTD70N03RT4G
MOSFET N-CH 25V 10A/32A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD70N03RT4G is an N-Channel Power MOSFET designed for efficient power management applications. This device features a drain-source voltage (Vdss) of 25V and offers a continuous drain current (Id) of 10A at 10A (Ta) and 32A (Tc). The low on-resistance (Rds On) is specified at 8mOhm at 20A, 10V, supported by drive voltages ranging from 4.5V to 10V. With a maximum power dissipation of 1.36W (Ta) and 62.5W (Tc), this MOSFET is suitable for demanding thermal environments. Key electrical characteristics include a gate charge (Qg) of 13.2 nC at 5V and input capacitance (Ciss) of 1333 pF at 20V. The threshold voltage (Vgs(th)) is a maximum of 2V at 250µA, with a gate-source voltage (Vgs) tolerance up to ±20V. Packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, this surface mount component operates across a temperature range of -55°C to 175°C. The NTD70N03RT4G is commonly utilized in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.36W (Ta), 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1333 pF @ 20 V |
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