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NTD70N03RG

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NTD70N03RG

MOSFET N-CH 25V 10A/32A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

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onsemi NTD70N03RG is an N-Channel power MOSFET designed for demanding applications. This device features a maximum Drain-to-Source Voltage (Vdss) of 25 V and offers a continuous Drain Current (Id) of 10 A at 25°C ambient temperature, scaling to 32 A at 25°C case temperature. The NTD70N03RG boasts a low On-Resistance (Rds On) of 8 mOhm at 20 A and 10 V Vgs. Its power dissipation capabilities are rated at 1.36 W (Ta) and 62.5 W (Tc). Key parameters include a Gate Charge (Qg) of 13.2 nC at 5 V and an Input Capacitance (Ciss) of 1333 pF at 20 V. The device operates within a temperature range of -55°C to 175°C (TJ) and is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package. This MOSFET is commonly utilized in power management, automotive, and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs8mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)1.36W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs13.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1333 pF @ 20 V

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