NTD70N03R-1G
MOSFET N-CH 25V 10A/32A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD70N03R-1G is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 25 V and offers a continuous drain current of 10 A at 25°C ambient and 32 A at 25°C case temperature. The low on-resistance (Rds On) of 8 mOhm at 20 A and 10 V gate drive, coupled with a maximum gate charge of 13.2 nC at 5 V, ensures minimal conduction and switching losses. It supports a gate-source voltage range of ±20 V and has a threshold voltage (Vgs(th)) of 2 V at 250 µA. The device is housed in an IPAK (TO-251-3 Short Leads) package for through-hole mounting. Power dissipation is rated at 1.36 W (Ta) and 62.5 W (Tc). This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.36W (Ta), 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1333 pF @ 20 V |
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