NTD70N03R-001
MOSFET N-CH 25V 10A/32A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD70N03R-001 is an N-Channel Power MOSFET in an IPAK package, offering a Vds of 25V. This component features a continuous drain current capability of 10A at ambient temperature and 32A at case temperature, with a maximum power dissipation of 1.36W (Ta) and 62.5W (Tc). The Rds(On) is specified at a maximum of 8mOhm at 20A and 10V. Key parameters include a gate charge (Qg) of 13.2 nC at 5V and input capacitance (Ciss) of 1333 pF at 20V. The device operates within a temperature range of -55°C to 175°C (TJ). This through-hole mounted component is suitable for applications in automotive and industrial power management.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.36W (Ta), 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1333 pF @ 20 V |
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