NTD6600NT4G
MOSFET N-CH 100V 12A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD6600NT4G is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain current (Id) of 12A (Ta) at 25°C. With a maximum On-Resistance (Rds On) of 146mOhm at 6A and 5V, it offers low conduction losses. The device supports a gate drive voltage of 5V for achieving its specified Rds On. Key parameters include a typical Gate Charge (Qg) of 20 nC at 5V and Input Capacitance (Ciss) of 700 pF at 25V. The NTD6600NT4G is housed in a surface-mount DPAK (TO-252-3, DPAK) package, enabling efficient thermal management with a Power Dissipation of 1.28W (Ta) and 56.6W (Tc). This MOSFET is suitable for use in automotive and industrial power switching applications. It operates within an extended temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 146mOhm @ 6A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.28W (Ta), 56.6W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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