NTD6600N-1G
MOSFET N-CH 100V 12A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD6600N-1G is an N-Channel Power MOSFET designed for demanding applications. This through-hole component features a Drain-to-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 12 A at 25°C ambient. The device exhibits a maximum On-Resistance (Rds On) of 146 mOhm at 6 A and 5 V gate drive. Key parameters include a Gate Charge (Qg) of 20 nC and Input Capacitance (Ciss) of 700 pF, both specified at 5 V and 25 V respectively. With a maximum power dissipation of 1.28 W (ambient) and 56.6 W (case), and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for power management circuits in automotive and industrial automation sectors. It is supplied in an IPAK package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 146mOhm @ 6A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.28W (Ta), 56.6W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |