NTD6600N-001
MOSFET N-CH 100V 12A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD6600N-001 is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 12A at 25°C, with a maximum power dissipation of 1.28W (Ta) and 56.6W (Tc). The Rds On is specified at a maximum of 146mOhm at 6A and 5V drive voltage. Key parameters include a gate charge (Qg) of 20 nC at 5V and input capacitance (Ciss) of 700 pF at 25V. Operating over a temperature range of -55°C to 175°C (TJ), it is housed in a TO-251-3 Short Leads, IPAK package, suitable for through-hole mounting. This device is commonly utilized in power management systems, industrial automation, and automotive electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 146mOhm @ 6A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.28W (Ta), 56.6W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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