NTD6600N
MOSFET N-CH 100V 12A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD6600N is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) rating of 12A at 25°C (Ta). With a maximum Rds On of 146mOhm at 6A and 5V Vgs, it offers efficient switching. The gate charge (Qg) is a maximum of 20 nC at 5V, and input capacitance (Ciss) is 700 pF at 25V. Power dissipation is rated at 1.28W (Ta) and 56.6W (Tc). The NTD6600N is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package. It operates across a temperature range of -55°C to 175°C (TJ). This component is suitable for use in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 146mOhm @ 6A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.28W (Ta), 56.6W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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