NTD65N03RT4G
MOSFET N-CH 25V 9.5A/32A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD65N03RT4G is an N-channel Power MOSFET designed for efficient power switching applications. This device features a drain-to-source voltage (Vdss) of 25 V and a continuous drain current (Id) of 9.5 A at 25°C ambient temperature, increasing to 32 A under continuous drain current at case temperature. With a low on-resistance (Rds On) of 8.4 mOhm at 30 A and 10 V, it minimizes conduction losses, achieving a maximum power dissipation of 1.3 W at 25°C ambient and up to 50 W at case temperature. The NTD65N03RT4G utilizes MOSFET technology and is available in a TO-252-3, DPAK surface mount package, supplied on tape and reel. Key parameters include a gate charge (Qg) of 16 nC at 5 V and input capacitance (Ciss) of 1400 pF at 20 V. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta), 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 20 V |
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