NTD65N03R-35G
MOSFET N-CH 25V 9.5A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD65N03R-35G is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 25 V and a continuous Drain current (Id) of 65 A at 25°C (Tc). The low on-resistance of 8.4 mOhm maximum at 30 A and 10 V gate drive ensures minimal power loss. With a typical gate charge (Qg) of 16 nC at 5 V and an input capacitance (Ciss) of 1400 pF at 20 V, it is suitable for various switching frequencies. The NTD65N03R-35G utilizes MOSFET technology and is housed in a TO-251-3 Stub Leads, IPAK package for through-hole mounting. This component is commonly found in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 30A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 20 V |
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