NTD65N03R-1G
MOSFET N-CH 25V 9.5A/32A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD65N03R-1G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 25V and a continuous drain current capability of 9.5A at 25°C ambient and 32A at 25°C case temperature. With a low Rds(on) of 8.4mOhm maximum at 30A and 10V, it minimizes conduction losses. The NTD65N03R-1G supports gate drive voltages from 4.5V to 10V, with a maximum gate charge of 16nC at 5V. Input capacitance (Ciss) is 1400pF maximum at 20V. Power dissipation is rated at 1.3W (Ta) and 50W (Tc). This MOSFET utilizes Metal Oxide technology and is packaged in an IPAK (TO-251-3 Short Leads) through-hole configuration. The NTD65N03R-1G is suitable for use in automotive and industrial power management systems. Operating temperature range is -55°C to 175°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta), 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 20 V |
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