NTD65N03R
MOSFET N-CH 25V 9.5A/32A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD65N03R is an N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-to-Source Voltage (Vdss) of 25V, this component offers a continuous drain current of 9.5A at 25°C ambient and 32A at 25°C case temperature. With a low on-resistance (Rds On) of 8.4mOhm at 30A and 10V Vgs, it ensures efficient power handling. The device supports gate drive voltages from 4.5V to 10V and has a maximum gate charge (Qg) of 16 nC at 5V. Its input capacitance (Ciss) is rated at a maximum of 1400 pF at 20V Vds. The NTD65N03R is housed in a TO-252-3, DPAK package for surface mounting. The maximum power dissipation is 1.3W (Ta) and 50W (Tc). This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta), 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 20 V |
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