NTD6416ANL-1G
MOSFET N-CH 100V 19A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD6416ANL-1G is an N-Channel Power MOSFET designed for demanding applications. This through-hole component features a Drain-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 19 A at 25°C, with a maximum power dissipation of 71 W at the same temperature. The Rds On is specified at a maximum of 74 mOhm at 19 A and 10 V gate drive. Key parameters include a gate charge of 40 nC at 10 V and an input capacitance (Ciss) of 1000 pF at 25 V. The device operates across a wide temperature range of -55°C to 175°C. The NTD6416ANL-1G is housed in an IPAK package (TO-251-3 Short Leads) and is suitable for use in industrial and automotive power management systems requiring robust switching performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 74mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V |
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