NTD6416AN-1G
MOSFET N-CH 100V 17A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD6416AN-1G is an N-Channel Power MOSFET designed for power management applications. This through-hole component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 17A at 25°C (Tc). With a maximum power dissipation of 71W (Tc), it offers a low on-resistance (Rds On) of 81mOhm at 17A and 10V gate drive. Key parameters include a gate charge (Qg) of 20 nC (max) at 10V and an input capacitance (Ciss) of 620 pF (max) at 25V. The device operates over a temperature range of -55°C to 175°C (TJ) and is housed in a TO-251-3 Short Leads, IPAK package. This MOSFET is suitable for automotive and industrial applications requiring robust power switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 81mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |
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